ページの先頭です。 メニューを飛ばして本文へ
トップページ > アーカイブス > No.4(2001)11.p-n Junction made from spin-on-glass

No.4(2001)11.p-n Junction made from spin-on-glass

印刷用ページを表示する 更新日:2016年12月19日更新

 

Elito KAZAWA and Takeshi UENO

Micromachined silicon sensors are designed for various purposes. For example, silicon microfabricated cantilevers with piezoresistive readout are now successfully used in commercial atomic force microscope. These piezoresitors are isolated by using p-n junction which is made by ion implantation. In this paper, a new approach is introduced for making p-n junction with doped spin-on glass. Spin-on glass (SOG) has been widely used in semiconductor microelectronics processes where thin high quality dielectric films are desired. The films can be prepared by spraying, dip-coating, or spinning of an organosilicon on to a solid substrate. The design, fabrication, and experimental characterization is presented.

 

Keywords
spin-on-glass, micromachine, p-n junction, photo-sensors

 


Back to Contents

 


ページの先頭へ